NIST logo

Publication Citation: Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM

NIST Authors in Bold

Author(s): L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta;
Title: Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM
Published: January 01, 1993
Abstract: Field ion microscopists demonstrated more than twenty years ago that polarizable atoms adsorbed on a stepped surface can be induced to diffuse by an electric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electronic properties of both the naturally occuring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.
Conference: Atomic and Nanoscale Modification of Materials: Fundamentals and Applications
Pages: pp. 25 - 35
Location: Ventura, CA
Dates: August 17, 1992
Research Areas: Scanning tunneling microscopy (STM)
PDF version: PDF Document Click here to retrieve PDF version of paper (479KB)