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|Author(s):||L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta;|
|Title:||Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM|
|Published:||January 01, 1993|
|Abstract:||Field ion microscopists demonstrated more than twenty years ago that polarizable atoms adsorbed on a stepped surface can be induced to diffuse by an electric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electronic properties of both the naturally occuring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.|
|Conference:||Atomic and Nanoscale Modification of Materials: Fundamentals and Applications|
|Pages:||pp. 25 - 35|
|Dates:||August 17, 1992|
|Research Areas:||Scanning tunneling microscopy (STM)|
|PDF version:||Click here to retrieve PDF version of paper (479KB)|