| Author(s): |
L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta; |
| Title: |
Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM |
| Published: |
January 01, 1993 |
| Abstract: |
Field ion microscopists demonstrated more than twenty years ago that polarizable atoms adsorbed on a stepped surface can be induced to diffuse by an electric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electronic properties of both the naturally occuring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators. |
| Conference: |
Atomic and Nanoscale Modification of Materials: Fundamentals and Applications |
| Pages: |
pp. 25 - 35 |
| Location: |
Ventura, CA |
| Dates: |
August 17, 1992 |
| Research Areas: |
Scanning tunneling microscopy (STM) |
| PDF version: |
 Click here to retrieve PDF version of paper (468KB) |
