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|Author(s):||S Apell; David R. Penn; Mark D. Stiles;|
|Title:||Theory of Photo-induced Resonant Tunneling in Heterojunctions|
|Published:||January 01, 1992|
|Abstract:||The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiples of the photon energy. An alternative mechanism in which bulk photoabsorption is the photoexcitation mechanism is discussed. The two theories take the same form in the weak- field limit, and an expression is given for the relative size of tunneling currents|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 1175 - 1177|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|