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|Author(s):||Mark D. Stiles; D Hamann;|
|Title:||Theory of Ballistic Electron Emission Spectroscopy of NiSi2/Si(111) Interfaces|
|Published:||January 01, 1992|
|Abstract:||We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi2-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a model calculation of the electrons tunneling from the tip. We compare the calculated spectra with existing experimental data and discuss a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution|
|Citation:||Materials Science and Engineering B-Solid State Materials for Advanced Technology|
|Pages:||pp. 291 - 296|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|