| Author(s): |
Mark D. Stiles; D Hamann; |
| Title: |
Theory of Ballistic Electron Emission Spectroscopy of NiSi2/Si(111) Interfaces |
| Published: |
January 01, 1992 |
| Abstract: |
We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi2-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a model calculation of the electrons tunneling from the tip. We compare the calculated spectra with existing experimental data and discuss a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution |
| Citation: |
Materials Science and Engineering B-Solid State Materials for Advanced Technology |
| Volume: |
14 |
| Issue: |
3 |
| Pages: |
pp. 291 - 296 |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
