| Author(s): |
Mark D. Stiles; D Hamann; |
| Title: |
Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi2/Si(111) Interfaces |
| Published: |
January 01, 1991 |
| Abstract: |
We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages |
| Citation: |
Physical Review Letters |
| Volume: |
66 |
| Issue: |
24 |
| Pages: |
pp. 3179 - 3182 |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
