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|Author(s):||Mark D. Stiles; D Hamann;|
|Title:||Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi2/Si(111) Interfaces|
|Published:||January 01, 1991|
|Abstract:||We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages|
|Citation:||Physical Review Letters|
|Pages:||pp. 3179 - 3182|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|