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|Author(s):||L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta;|
|Title:||Geometric and Electronic Properties of Cs Structures on III-V (110) Surfaces: From 1-D and 2-D Insulators to 3-D Metals|
|Published:||January 01, 1991|
|Abstract:||We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in a c(4 x 4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayer|
|Citation:||Physical Review Letters|
|Pages:||pp. 1338 - 1341|
|Research Areas:||Scanning tunneling microscopy (STM)|