| Author(s): |
L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta; |
| Title: |
Geometric and Electronic Properties of Cs Structures on III-V (110) Surfaces: From 1-D and 2-D Insulators to 3-D Metals |
| Published: |
January 01, 1991 |
| Abstract: |
We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in a c(4 x 4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayer |
| Citation: |
Physical Review Letters |
| Volume: |
66 |
| Issue: |
10 |
| Pages: |
pp. 1338 - 1341 |
| Research Areas: |
Scanning tunneling microscopy (STM) |
