| Author(s): |
Mark D. Stiles; D Hamann; |
| Title: |
Electron Transmission Through NiSi2-Si Interfaces |
| Published: |
January 01, 1989 |
| Abstract: |
Calculations of electron transmission through epitaxial NiSi2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of primary importance for transport, more than 50% are reflected by the type-A orientation interface and more than 80% by the type B. |
| Citation: |
Physical Review B (Condensed Matter and Materials Physics) |
| Volume: |
40 |
| Issue: |
2 |
| Pages: |
pp. 1349 - 1352 |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
