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|Author(s):||N Theodoropoulou; Abhishek Sharma; W Pratt; J. Bass; Mark D. Stiles; J Xiao;|
|Title:||'Ballistic' vs. 'Diffusive' Transport in Current-Induced Magnetization Switching|
|Published:||December 21, 2007|
|Abstract:||We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = λ/t = 3 for a Cu spacer layer, and diffusive to r = 0.4 for a CuGe alloy spacer layer, where λ is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.|
|Citation:||Physical Review B (Condensed Matter and Materials Physics)|
|Keywords:||ballistic transport,Boltzmann equation,current-induced magnetization,diffusive transport,nanopillar,spin-transfer torque,spin-valve|
|PDF version:||Click here to retrieve PDF version of paper (247KB)|