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|Author(s):||Gregory M. Rutter; N Guisinger; Jason Crain; Emily Jarvis; Mark D. Stiles; T Li; P First; Joseph A. Stroscio;|
|Title:||Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy|
|Published:||December 14, 2007|
|Abstract:||The potential for electronics based on graphene, a single layer of sp2-bonded carbon atoms, rests on the ability to fabricate graphene into useful devices. Graphene grown epitaxially on SiC substrates offers an avenue for carbon-based electronics allowing for large area fabrication of carbon structures, patterning with standard lithographic procedures, and potential integration with current Si technology 1,2. A major obstacle to this approach is a lack of understanding of the role that the SiC interface plays in determining the electronic properties and charge transport in the graphene/SiC system. In this letter, we image the interface structure beneath the first graphene layer on the SiC substrate using scanning tunneling microscopy (STM) at a series of bias voltages. Such imaging is possible because the first layer of graphene becomes semi-transparent at energies of 1 eV above or below the Fermi-energy, yielding images of the SiC interface. Our analysis of calculations based on density functional theory shows how this transparency arises from the electronic structure of a graphene layer on the SiC substrate.|
|Citation:||Physical Review B (Condensed Matter and Materials Physics)|
|Research Areas:||Scanning tunneling microscopy (STM)|
|PDF version:||Click here to retrieve PDF version of paper (472KB)|