| Author(s): |
Yicheng Wang; Loucas G. Christophorou; James K. Olthoff; J. K. Verbrugge; |
| Title: |
Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF3, and its Mixtures with Argon |
| Published: |
December 01, 1998 |
| Abstract: |
Measurements are reported of (i) the electron drift velocity in pure trifluoromethane (CHF3) gas and in its mixtures with argon, and (ii) electron attachment in pure CHF3. The E/N dependence on the electron drift velocity in mixtures exhibits regions of distinct negative differential conductivity. The values of the electron attachment coefficients in pure CHF3 are small and decrease with E/N. The measurements were made at room temperature and over the E/N range from 0.05 X 10-17 V cm-2 to 60 x 10-17 V cm2 (0.05 Td to 60 Td, 1 Td = 10-17 V cm2). The electron attachment rate constant is virtually independent of E/N below about 50 x 10-17 V cm2 and equal to {difference} 13 x 10-14 cm3 S-1. This small attachment rate constant may be due to impurities. |
| Proceedings: |
Proc., Intl. Symp. on Gaseous Dielectrics |
| Pages: |
pp. 39 - 44 |
| Location: |
Virginia Beach, VA |
| Dates: |
June 2-5, 1998 |
| Keywords: |
;CHF3;drift velocity;electron attachment; |
| Research Areas: |
Electronics & Telecommunications |
| PDF version: |
 Click here to retrieve PDF version of paper (3MB) |
