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Publication Citation: High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

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Author(s): David W. Berning; Tam H. Duong; Jose M. Ortiz; Angel Rivera; Allen R. Hefner Jr;
Title: High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules
Published: June 02, 2008
Abstract: A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown that the circuit satisfies the requirements needed for the DARPA WBST-HPE Solid State Power Substation (SSPS). These requirements include 30 kV voltage-isolation for the high-side MOSFETs, very low capacitance between the ground and floating driver sides, and 20 kHz operation. Block diagram and detailed discussion of principles of operation of the gate drive circuit are given, together with measured and simulated waveforms of performance evaluation.
Proceedings: Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Pages: 7 pp.
Location: Edmonton, CA
Dates: October 5-9, 2008
Research Areas: Electric Power Metrology
PDF version: PDF Document Click here to retrieve PDF version of paper (4MB)