Campbell, J.
, Cheung, K.
, Suehle, J.
and Oates, A.
(2008),
Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications, Proceedings of the 2008 Symposium on VLSI Technology, Honolulu, HI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32983
(Accessed April 20, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Published
Author(s)
, , , A Oates
Abstract
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.Proceedings Title
Proceedings of the 2008 Symposium on VLSI Technology
Conference Dates
June 17-19, 2008
Conference Location
Honolulu, HI
Conference Title
2008 Symposium on VLSI Technology
Pub Type
Conferences
Download Paper
Keywords
NBTI, electron trapping, hole trapping, fast-IDVG
Citation
Created June 17, 2008, Updated February 19, 2017