| Author(s): |
Jason P. Campbell; Kin P. Cheung; John S. Suehle; A Oates; |
| Title: |
Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications |
| Published: |
June 17, 2008 |
| Abstract: |
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions. |
| Conference: |
2008 Symposium on VLSI Technology |
| Proceedings: |
Proceedings of the 2008 Symposium on VLSI Technology |
| Pages: |
pp. 76 - 77 |
| Location: |
Honolulu, HI |
| Dates: |
June 17-19, 2008 |
| Keywords: |
NBTI; electron trapping; hole trapping; fast-IDVG |
| Research Areas: |
Semiconductors |
| PDF version: |
 Click here to retrieve PDF version of paper (304KB) |
