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|Author(s):||Jason P. Campbell; Kin P. Cheung; John S. Suehle; A Oates;|
|Title:||Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications|
|Published:||June 17, 2008|
|Abstract:||We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.|
|Conference:||2008 Symposium on VLSI Technology|
|Proceedings:||Proceedings of the 2008 Symposium on VLSI Technology|
|Pages:||pp. 76 - 77|
|Dates:||June 17-19, 2008|
|Keywords:||NBTI, electron trapping, hole trapping, fast-IDVG|
|PDF version:||Click here to retrieve PDF version of paper (312KB)|