NIST logo

Publication Citation: Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

NIST Authors in Bold

Author(s): Jason P. Campbell; Kin P. Cheung; John S. Suehle; A Oates;
Title: Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Published: June 17, 2008
Abstract: We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.
Conference: 2008 Symposium on VLSI Technology
Proceedings: Proceedings of the 2008 Symposium on VLSI Technology
Pages: pp. 76 - 77
Location: Honolulu, HI
Dates: June 17-19, 2008
Keywords: NBTI; electron trapping; hole trapping; fast-IDVG
Research Areas: Semiconductors
PDF version: PDF Document Click here to retrieve PDF version of paper (312KB)