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Publication Citation: New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements

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Author(s): Jason P. Campbell; Kin P. Cheung; John S. Suehle;
Title: New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements
Published: September 01, 2008
Abstract: Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate dielectric and at the interface. In this study, we show that the peak transconductance (GM) can also be extracted reliably in the microsecond time scale. The transient GM behavior provides additional insights not easily observed from an examination of VTH alone. Specifically, transient GM results illustrate that an electron trapping/de-trapping transient component contributes to the transient behavior observed in the negative bias temperature instability (NBTI). This electron trapping component, has never been reported.
Citation: Electron Device Letters
Volume: 29
Issue: 9
Pages: pp. 1065 - 1067
Keywords: NBTI, fast-IDVG, fast-GM, electron trapping
Research Areas: Advanced Materials
PDF version: PDF Document Click here to retrieve PDF version of paper (215KB)