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Publication Citation: THE FAST INITIAL THRESHOLD VOLTAGE SHIFT: NBTI OR HIGH-FIELD STRESS

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Author(s): Jason P. Campbell; Kin P. Cheung; John S. Suehle;
Title: THE FAST INITIAL THRESHOLD VOLTAGE SHIFT: NBTI OR HIGH-FIELD STRESS
Published: April 27, 2008
Abstract: Recent 'NBTI' studies have come to involve very high electric fields, yet these same studies are used to criticize the lower field 'NBTI' models. This study examines both high- and low-field degradation phenomena by monitoring the initial threshold voltage shift (VTH) as a function of stress time and stress voltage. We demonstrate that the initial VTH is recoverable and decays rapidly as the stress voltage is reduced. We also monitor the transient transconductance (GM) degradation which surprisingly indicates the presence of an electron trapping/de-trapping component. We argue that the initial VTH and GM degradation behaviors are consistent with high-field stress degradation. The electron trapping component of the 'recoverable' degradation is unexpected and must be addressed to insure accurate NBTI lifetime predictions.
Conference: International Reliability Physics Symposium
Proceedings: IEEE International Reliability Physics Symposium Proceedings
Pages: pp. 72 - 78
Location: Phoenix, AZ
Dates: April 27-May 1, 2008
Keywords: NBTI; High-Field Stress; hole-trapping; electron-trapping
Research Areas: Product Data
PDF version: PDF Document Click here to retrieve PDF version of paper (312KB)