NIST logo

Publication Citation: Scanning Probe Microscopy for Dielectric and Metal Characterization

NIST Authors in Bold

Author(s): Joseph J. Kopanski; Thomas R. Walker;
Title: Scanning Probe Microscopy for Dielectric and Metal Characterization
Published: June 10, 2008
Abstract: The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for characterizing the dielectric constant of insulators. Scanning Kelvin force microscopy (SKFM) can image potential distributions and work functions within conductors. Both techniques depend on the capacitance between the tip and sample, which has an inverse square dependence on tip-sample separation, limiting spatial resolution. A differential data acquisition technique to improve spatial resolution is described.
Conference: 213th Meeting of the Electrochemical Society
Proceedings: Electrochemical Society Transactions, Dielectrics for Nanosystems III
Volume: 13
Issue: 2
Pages: pp. 169 - 175
Location: Phoenix, AZ
Dates: May 18-22, 2008
Keywords: dielectric constant; IC-SCM; intermittent contact scanning capacitance microscopy; scanning Kelvin force microscopy; SKFM
Research Areas: Product Data