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Publication Citation: Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection

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Author(s): Mary A. Rowe; Eric Gansen; M. Greene; Danna Rosenberg; Todd E. Harvey; Mark Su; Robert Hadfield; Sae Woo Nam; Richard P. Mirin;
Title: Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection
Published: May 01, 2008
Abstract: We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our design features a dedicated absorption layer where photoexcited holes are produced and directed with tailored electric fields to the quantum dots. A barrier layer ensures that the quantum dot layer is located at a two-dimensional potential minimum of the structure for the efficient collection of holes. Using quantum dots as charge traps allows us to contain the photoexcited holes in a well-defined plane. We derive an equation for a uniform size of the photon signal based on this precise geometry. Finally, we show corroborating data with well-resolved signals corresponding to different numbers of photons.
Citation: Journal of Vacuum Science and Technology B
Volume: 26
Issue: (3)
Pages: pp. 1174 - 1177
Keywords: HEMT heterostuctures;photon number-determining detection;quantum dots;single photon detection
Research Areas: Quantum Optics
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