| Author(s): |
Mary A. Rowe; Eric Gansen; M. Greene; Danna Rosenberg; Todd E. Harvey; Mark Su; Robert Hadfield; Sae Woo Nam; Richard P. Mirin; |
| Title: |
Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection |
| Published: |
May 01, 2008 |
| Abstract: |
We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our design features a dedicated absorption layer where photoexcited holes are produced and directed with tailored electric fields to the quantum dots. A barrier layer ensures that the quantum dot layer is located at a two-dimensional potential minimum of the structure for the efficient collection of holes. Using quantum dots as charge traps allows us to contain the photoexcited holes in a well-defined plane. We derive an equation for a uniform size of the photon signal based on this precise geometry. Finally, we show corroborating data with well-resolved signals corresponding to different numbers of photons. |
| Citation: |
Journal of Vacuum Science and Technology B |
| Volume: |
26 |
| Issue: |
(3) |
| Pages: |
pp. 1174 - 1177 |
| Keywords: |
HEMT heterostuctures;photon number-determining detection;quantum dots;single photon detection |
| Research Areas: |
Quantum Optics |
| PDF version: |
 Click here to retrieve PDF version of paper (462KB) |
