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|Author(s):||Mary A. Rowe; Eric Gansen; M. Greene; Danna Rosenberg; Todd E. Harvey; Mark Su; Robert Hadfield; Sae Woo Nam; Richard P. Mirin;|
|Title:||Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection|
|Published:||May 01, 2008|
|Abstract:||We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our design features a dedicated absorption layer where photoexcited holes are produced and directed with tailored electric fields to the quantum dots. A barrier layer ensures that the quantum dot layer is located at a two-dimensional potential minimum of the structure for the efficient collection of holes. Using quantum dots as charge traps allows us to contain the photoexcited holes in a well-defined plane. We derive an equation for a uniform size of the photon signal based on this precise geometry. Finally, we show corroborating data with well-resolved signals corresponding to different numbers of photons.|
|Citation:||Journal of Vacuum Science and Technology B|
|Pages:||pp. 1174 - 1177|
|Keywords:||HEMT heterostuctures,photon number-determining detection,quantum dots,single photon detection|
|Research Areas:||Quantum Optics|
|PDF version:||Click here to retrieve PDF version of paper (473KB)|