| Author(s): |
John S. Suehle; |
| Title: |
Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides |
| Published: |
January 14, 2009 |
| Abstract: |
This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical models for describing the failure distributions observed after TDDB experiments. Finally, recent developments in ultra-thin dielectric breakdown, including soft breakdown and the power-law voltage acceleration model will be discussed. |
| Citation: |
Defects in Microelectronic Materials and Devices |
| Publisher: |
CRC Press, Boca Raton, FL |
| Pages: |
pp. 437 - 463 |
| Keywords: |
breakdown;CMOS;dielectric;reliability |
| Research Areas: |
Semiconductor Materials |
