Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides

NIST Authors in Bold

Author(s): John S. Suehle;
Title: Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides
Published: January 14, 2009
Abstract: This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical models for describing the failure distributions observed after TDDB experiments. Finally, recent developments in ultra-thin dielectric breakdown, including soft breakdown and the power-law voltage acceleration model will be discussed.
Citation: Defects in Microelectronic Materials and Devices
Publisher: CRC Press, Boca Raton, FL
Pages: pp. 437 - 463
Keywords: breakdown,CMOS,dielectric,reliability
Research Areas: Semiconductor Materials