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Publication Citation: Reverse Noise Measurement and Use in Device Characterization

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Author(s): James P. Randa; Tom McKay; Susan L. Sweeney; David K. Walker; Lawrence Wagner; David R. Greenberg; Jon Tao; G. Ali Rezvani;
Title: Reverse Noise Measurement and Use in Device Characterization
Published: June 10, 2006
Abstract: We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check measurement results, to significantly reduce the uncertainty in Γ optu , to reduce the occurence of unphysical results, and possibly to directly measure or constrain parameters in model of transistors.
Conference: 2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM JUNE 11-13, 2006
Pages: 4 pp.
Location: SAN FRANCISCO, CA
Dates: June 11-13, 2006
Keywords: CMOS, noise, noise measurements, on-wafer measurements
Research Areas: Electronics & Telecommunications, Microelectronics, Electromagnetics
PDF version: PDF Document Click here to retrieve PDF version of paper (189KB)