| Author(s): |
Safak Sayan; Nhan V. Nguyen; James R. Ehrstein; James J. Chambers; Mark R. Visokay; Manuel Quevedo-Lopez; Luigi Colombo; T Yoder; Igor Levin; Daniel Fischer; M Paunescu; Ozgur Celik; Eric Garfunkel; |
| Title: |
Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics |
| Published: |
November 22, 2005 |
| Abstract: |
We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction band offests by 1.20 +- 0.1 and 0.33 +- 0.05eV, respectively. |
| Citation: |
Applied Physics Letters |
| Volume: |
87 |
| Pages: |
pp. 212905-1 - 212905-3 |
| Keywords: |
band gap;band offset;hafnium silicate;hafnium-silicon oxynitride;high-K dielectric;soft x-ray photoemission, x-ray absorption spectroscopy |
| Research Areas: |
Semiconductors |
| PDF version: |
 Click here to retrieve PDF version of paper (302KB) |
