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Publication Citation: Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics

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Author(s): Safak Sayan; Nhan V. Nguyen; James R. Ehrstein; James J. Chambers; Mark R. Visokay; Manuel Quevedo-Lopez; Luigi Colombo; T Yoder; Igor Levin; Daniel Fischer; M Paunescu; Ozgur Celik; Eric Garfunkel;
Title: Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Published: November 22, 2005
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction band offests by 1.20 +- 0.1 and 0.33 +- 0.05eV, respectively.
Citation: Applied Physics Letters
Volume: 87
Pages: pp. 212905-1 - 212905-3
Keywords: band gap;band offset;hafnium silicate;hafnium-silicon oxynitride;high-K dielectric;soft x-ray photoemission, x-ray absorption spectroscopy
Research Areas: Semiconductors
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