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Publication Citation: Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide

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Author(s): Herbert S. Bennett; Howard Hung;
Title: Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Published: November 11, 2005
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at 'u, L, and X and one equivalent valence band at 'u ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests.
Citation: Journal of Applied Physics
Volume: 98
Issue: 10
Pages: 6 pp.
Research Areas: Semiconductors
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