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|Author(s):||Herbert S. Bennett; Howard Hung;|
|Title:||Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide|
|Published:||November 11, 2005|
|Abstract:||The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at 'u, L, and X and one equivalent valence band at 'u ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests.|
|Citation:||Journal of Applied Physics|
|PDF version:||Click here to retrieve PDF version of paper (101KB)|