| Author(s): |
Joseph J. Kopanski; W. R. Thurber; Melissa Chun; |
| Title: |
Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope |
| Published: |
July 01, 2006 |
| Abstract: |
The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characterization of dielectric films on semiconductors are described. Theoretical predictions are made of SCM-measured differential capacitance versus dc bias voltage ( {Δ}C-V) curves for metal-oxide-semiconductor (MOS) capacitors with various levels of fixed and interface traps. To better understand SCM (contactless) {Δ}C-V measurements, a study was conducted using the SCM to measure the {Δ}C-V properties of MOS capacitors with deposited metal contacts with areas ranging from 1 υm2 to 40000 υm2. As an example application, SCM measurements of the {Δ}C-V properties of low-temperature ozone-enhanced oxides on silicon are presented. Ozone-enhanced oxides with thicknesses greater than 3 nm were found to produce MOS like {Δ}C{Δ}V curves with interface trap densities sufficiently low to be useful for samples for dopant profile extraction. |
| Citation: |
Interfaces in Electronic Materials |
| Publisher: |
Electrochemical Society, Pennington, NJ |
| Keywords: |
C-V;Capacitance-voltage characterization;interface traps;oxide fixed charge;oxide quality;ozone-enhanced oxidation;scanning capacitance microscope, SCM |
| Research Areas: |
Semiconductors |
