NIST logo

Publication Citation: Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope

NIST Authors in Bold

Author(s): Joseph J. Kopanski; W. R. Thurber; Melissa Chun;
Title: Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Published: July 01, 2006
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characterization of dielectric films on semiconductors are described. Theoretical predictions are made of SCM-measured differential capacitance versus dc bias voltage ( {Δ}C-V) curves for metal-oxide-semiconductor (MOS) capacitors with various levels of fixed and interface traps. To better understand SCM (contactless) {Δ}C-V measurements, a study was conducted using the SCM to measure the {Δ}C-V properties of MOS capacitors with deposited metal contacts with areas ranging from 1 υm2 to 40000 υm2. As an example application, SCM measurements of the {Δ}C-V properties of low-temperature ozone-enhanced oxides on silicon are presented. Ozone-enhanced oxides with thicknesses greater than 3 nm were found to produce MOS like {Δ}C{Δ}V curves with interface trap densities sufficiently low to be useful for samples for dopant profile extraction.
Citation: Interfaces in Electronic Materials
Publisher: Electrochemical Society, Pennington, NJ
Keywords: C-V;Capacitance-voltage characterization;interface traps;oxide fixed charge;oxide quality;ozone-enhanced oxidation;scanning capacitance microscope, SCM
Research Areas: Semiconductors