Composition standards for III-V semiconductor epitaxial films

Published

November 11, 2002

Author(s)

Kristine A. Bertness, Lawrence H. Robins, J T. Armstrong, Ryna B. Marinenko, Albert J. Paul, Marc L. Salit

Abstract

A program is underway at NIST to establish standard reference materials (SRMs) for the calibration of instruments used to measure the chemical composition of epitaxially grown III-V semiconductor thin films. These SRMs are designed for the calibration of measurement systems that measure composition directly, such as electron microprobe analysis (EMPA), x-ray photoemission spectroscopy, and secondary ion mass spectroscopy. The SRMs will also allow greater accuracy in the correlation of optical transitions (from photoluminescence [PL]) and film strain (from x-ray rocking curves) with film composition. We are certifying the composition with a rigorous correlation of EMPA, PL, analytical chemistry measurements on dissolved films, and 'in situ' measurements during the film growth using molecular beam epitaxy. Our first release will be Al_xGa_1-xAs with Al mole fraction near 'x'=0.20 and uncertainty {+/-} 0.003.

Proceedings Title

Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo

Conference Dates

November 11-13, 2002

Conference Location

San Jose, CA

Pub Type

Conferences

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Keywords

AlGaAs, characterization, composition standards, compound semiconductor, molecular beam epitaxy

Citation

Bertness, K. , Robins, L. , Armstrong, J. , Marinenko, R. , Paul, A. and Salit, M. (2002), Composition standards for III-V semiconductor epitaxial films, Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30845 (Accessed October 26, 2025)