Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Composition standards for III-V semiconductor epitaxial films

NIST Authors in Bold

Author(s): Kristine A. Bertness; Lawrence H. Robins; J T. Armstrong; Ryna B. Marinenko; Albert J. Paul; Marc L. Salit;
Title: Composition standards for III-V semiconductor epitaxial films
Published: November 11, 2002
Abstract: A program is underway at NIST to establish standard reference materials (SRMs) for the calibration of instruments used to measure the chemical composition of epitaxially grown III-V semiconductor thin films. These SRMs are designed for the calibration of measurement systems that measure composition directly, such as electron microprobe analysis (EMPA), x-ray photoemission spectroscopy, and secondary ion mass spectroscopy. The SRMs will also allow greater accuracy in the correlation of optical transitions (from photoluminescence [PL]) and film strain (from x-ray rocking curves) with film composition. We are certifying the composition with a rigorous correlation of EMPA, PL, analytical chemistry measurements on dissolved films, and 'in situ' measurements during the film growth using molecular beam epitaxy. Our first release will be AlxGa1-xAs with Al mole fraction near 'x'=0.20 and uncertainty {+/-} 0.003.
Proceedings: Tech. Dig., CS-MAX 2002, Compound Semiconductor Mfg. Expo
Pages: pp. 42 - 44
Location: San Jose, CA
Dates: November 11-13, 2002
Keywords: AlGaAs,characterization,composition standards,compound semiconductor,molecular beam epitaxy
Research Areas: Physics
PDF version: PDF Document Click here to retrieve PDF version of paper (430KB)