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Publication Citation: Contact-Pad Design for High-Frequency Silicon Measurements

NIST Authors in Bold

Author(s): Dylan F. Williams; A. C. Byers; V. C. Tyree; David K. Walker; J. J. Ou; X. Jin; M. Piket-Moy; C. Hu;
Title: Contact-Pad Design for High-Frequency Silicon Measurements
Published: October 01, 2000
Abstract: We measure and compare the electrical parasitics of contact pads of different designs fabricated on silicon integrated circuits and develop a strategy for reducing the parasitics.
Proceedings: Dig., 9th Elect. Perf. Elect. Pkg. Conf.
Pages: pp. 131 - 134
Location: Scottsdale, AZ
Dates: October 23-25, 2000
Keywords: characteristic impedance,contact pads,measurement,silicon,substrate effect
Research Areas: Electromagnetics
DOI: http://dx.doi.org/10.1109/EPEP.2000.895510  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (73KB)