NIST logo

Publication Citation: Contact-Pad Design for High-Frequency Silicon Measurements

NIST Authors in Bold

Author(s): Dylan F. Williams; A. C. Byers; V. C. Tyree; David K. Walker; J. J. Ou; X. Jin; M. Piket-Moy; C. Hu;
Title: Contact-Pad Design for High-Frequency Silicon Measurements
Published: October 01, 2000
Abstract: We measure and compare the electrical parasitics of contact pads of different designs fabricated on silicon integrated circuits and develop a strategy for reducing the parasitics.
Proceedings: Dig., 9th Elect. Perf. Elect. Pkg. Conf.
Pages: pp. 131 - 134
Location: Scottsdale, AZ
Dates: October 23-25, 2000
Keywords: characteristic impedance;contact pads;measurement;silicon;substrate effect;
Research Areas: Electromagnetics