| Author(s): |
Eric M. Vogel; Monica D. Edelstein; John S. Suehle; |
| Title: |
Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress |
| Published: |
November 01, 2001 |
| Abstract: |
Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hotholes may be responsible for the breakdown ultra-thin silicon dioxide. |
| Citation: |
Microelectronic Engineering |
| Pages: |
pp. 1 - 11 |
| Keywords: |
;reliability;silicon dioxide;tunneling;MOS;semiconductor;breakdown; |
| Research Areas: |
Semiconductors |
