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Publication Citation: Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress

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Author(s): Eric M. Vogel; Monica D. Edelstein; John S. Suehle;
Title: Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Published: November 01, 2001
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hotholes may be responsible for the breakdown ultra-thin silicon dioxide.
Citation: Microelectronic Engineering
Pages: pp. 1 - 11
Keywords: ;reliability;silicon dioxide;tunneling;MOS;semiconductor;breakdown;
Research Areas: Semiconductors