NIST logo

Publication Citation: A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators

NIST Authors in Bold

Author(s): Curt A. Richter; Allen R. Hefner Jr; Eric M. Vogel;
Title: A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
Published: January 01, 2001
Abstract: We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done.
Citation: IEEE Electron Device Letters
Volume: 22
Issue: 1
Pages: pp. 35 - 37
Keywords: ;capacitance;effective;oxide thickness;gate dielectric;MOS devices;polysilicon depletion;inversion quantization;
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (63KB)