| Author(s): |
Curt A. Richter; Allen R. Hefner Jr; Eric M. Vogel; |
| Title: |
A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators |
| Published: |
January 01, 2001 |
| Abstract: |
We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done. |
| Citation: |
IEEE Electron Device Letters |
| Volume: |
22 |
| Issue: |
1 |
| Pages: |
pp. 35 - 37 |
| Keywords: |
;capacitance;effective;oxide thickness;gate dielectric;MOS devices;polysilicon depletion;inversion quantization; |
| Research Areas: |
Electronics & Telecommunications |
| PDF version: |
 Click here to retrieve PDF version of paper (62KB) |
