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|Author(s):||Curt A. Richter; Allen R. Hefner Jr.; Eric M. Vogel;|
|Title:||A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators|
|Published:||January 01, 2001|
|Abstract:||We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done.|
|Citation:||IEEE Electron Device Letters|
|Pages:||pp. 35 - 37|
|Keywords:||capacitance,effective,oxide thickness,gate dielectric,MOS devices,polysilicon depletion,inversion quantization|
|Research Areas:||Electronics & Telecommunications|
|PDF version:||Click here to retrieve PDF version of paper (63KB)|