| Author(s): |
Allen R. Hefner Jr; David W. Berning; David L. Blackburn; Christophe C. Chapuy; Sebastien Bouche; |
| Title: |
A High-Speed Thermal Imaging System for Semiconductor Device Analysis |
| Published: |
April 01, 2001 |
| Abstract: |
A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument graphical user interface software that controls an infrared thermal microscope, translation stages, digitizing oscilloscope, and a device test fixture temperature controller. The computer interface consists of a front panel for viewing the temperature distribution and includes a movie play back feature that enables viewing of the temperature distribution versus time. The computer user interface also has a sub-panel for emissivity mapping and calibration of the infrared detector. The utility of the system is demonstrated in this paper using a bipolar transistor hotspot current constriction process. |
| Proceedings: |
Proc., Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium |
| Pages: |
pp. 43 - 49 |
| Location: |
San Jose, CA |
| Dates: |
March 20-22, 2001 |
| Keywords: |
;infrared thermal measurement;semiconductor device heating;transient thermal image; |
| Research Areas: |
Electronics & Telecommunications |
| PDF version: |
 Click here to retrieve PDF version of paper (2MB) |
