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Publication Citation: Characterization of Asymmetric Coupled CMOS Lines

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Author(s): Uwe Arz; Dylan F. Williams; David K. Walker; J. E. Rogers; M. Rudack; D. Treytner; Hartmut Grabinski;
Title: Characterization of Asymmetric Coupled CMOS Lines
Published: June 01, 2000
Abstract: This paper investigates the properties of asymmetric coupled lines built in a 0.25 5m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from callibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.
Proceedings: Dig., IEEE Microwave Theory Tech. Intl. Symp.
Volume: 2
Pages: pp. 609 - 612
Location: Boston, MA
Dates: June 11-16, 2000
Keywords: electromagnetic simulation,equivalent-circuit parameters,measurement,silicon,substrate effect transmission line
Research Areas: Microwave Measurement Services
DOI: http://dx.doi.org/10.1109/MWSYM.2000.863258  (Note: May link to a non-U.S. Government webpage)
PDF version: PDF Document Click here to retrieve PDF version of paper (254KB)