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|Author(s):||Uwe Arz; Dylan F. Williams; David K. Walker; J. E. Rogers; M. Rudack; D. Treytner; Hartmut Grabinski;|
|Title:||Characterization of Asymmetric Coupled CMOS Lines|
|Published:||June 01, 2000|
|Abstract:||This paper investigates the properties of asymmetric coupled lines built in a 0.25 5m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from callibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.|
|Proceedings:||Dig., IEEE Microwave Theory Tech. Intl. Symp.|
|Pages:||pp. 609 - 612|
|Dates:||June 11-16, 2000|
|Keywords:||electromagnetic simulation,equivalent-circuit parameters,measurement,silicon,substrate effect transmission line|
|Research Areas:||Microwave Measurement Services|
|DOI:||http://dx.doi.org/10.1109/MWSYM.2000.863258 (Note: May link to a non-U.S. Government webpage)|
|PDF version:||Click here to retrieve PDF version of paper (254KB)|