Publication Citation
NIST Authors in Bold
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| Author(s): | Allen R. Hefner Jr; |
|---|---|
| Title: | An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT) |
| Published: | December 31, 1989 |
| Abstract: | |
| Proceedings: | Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89 |
| Pages: | pp. 303 - 313 |
| Location: | Milwaukee, WI |
| Dates: | June 26-29, 1989 |
| Research Areas: | Electronics & Telecommunications |
| PDF version: |  Click here to retrieve PDF version of paper (843KB) |