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Publication Citation: An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

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Author(s): Allen R. Hefner Jr;
Title: An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published: December 31, 1989
Abstract:
Proceedings: Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89
Pages: pp. 303 - 313
Location: Milwaukee, WI
Dates: June 26-29, 1989
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (864KB)