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Publication Citation: Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)

NIST Authors in Bold

Author(s): Allen R. Hefner Jr.;
Title: Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: December 01, 1990
Abstract:
Citation: IEEE Transactions on Industry Applications
Volume: 26
Issue: 6
Pages: pp. 995 - 1005
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (947KB)