| Author(s): |
Allen R. Hefner Jr; |
| Title: |
Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT) |
| Published: |
December 31, 1988 |
| Abstract: |
|
| Conference: |
IEEE Industry Applications Society (IAS) Annual Meeting |
| Proceedings: |
Proc., IEEE Industry Applications Society (IAS) Annual Meeting |
| Pages: |
pp. 606 - 614 |
| Location: |
Pittsburgh, PA |
| Dates: |
October 2-7, 1988 |
| Research Areas: |
Electronics & Telecommunications |
| PDF version: |
 Click here to retrieve PDF version of paper (801KB) |
