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Publication Citation: Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)

NIST Authors in Bold

Author(s): Allen R. Hefner Jr.;
Title: Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)
Published: December 31, 1988
Abstract:
Conference: IEEE Industry Applications Society (IAS) Annual Meeting
Proceedings: Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Pages: pp. 606 - 614
Location: Pittsburgh, PA
Dates: October 2-7, 1988
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (820KB)