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The semiconductor industry requires sub-nanometer, 3-dimensional quantitative elemental mapping of materials, nanoscale structures, and devices with high
NIST is engaged in a joint effort between the Material Measurement Laboratory (MML) and the Physical Measurement Laboratory (PML) aimed at revolutionizing 3D
GaN nanowires grown by catalyst-free molecular beam epitaxy have the unique property that most nanowires are completely free of crystalline defects. This
We synthesize semiconductor nanostructures to serve both as test structures for measurement techniques and as building blocks for novel metrology tools and
Scanning probe technology is an essential tool for measuring nanostructure properties. A major goal in our project is to develop unique probes that combine
The core activities in this program are the development and application of metrology for quantitative characterization of hetero-structured materials and
Heat is carried in solid materials predominantly by atomic vibrational waves called phonons. Theory, simulations and experiments have shown that heat transport
As devices become smaller, more complex, and more highly integrated, interfaces are increasingly important and limiting. The ability to accurately predict
The power electronics and radio frequency (RF) communications industries increasingly rely on semiconductors in the GaN/AlGaN family, where performance is
Relentless, unabated growth of wireless communications technology, and the resulting extraordinary demand for bandwidth has led to the exploration of previously
NIST is developing AI and machine learning methods to improve the fidelity of novel nanoscale microscopy techniques that are under research by NIST physicists.
This research leverages a new laser technology, the super-continuum laser, to produce a programmable solar simulator that can rapidly configure to match nearly