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Metrology

Electrical / electromagnetic metrology

News and Updates

NIST Office of Weights and Measures Info Hours

2025 NIST OWM “Info Hours” Series

The NIST Office of Weights and Measures (OWM) is pleased to announce the schedule for the 2025 Info Hours series. An Info Hour is a one-hour session that

Events

Projects and Programs

thermal converter

AC-DC Difference

Ongoing
The use of thermal converters for ac voltage metrology was introduced by Frank Hermach at NIST in 1952. The basic thermal converter is a thermoelement, consisting of a thermocouple positioned at the midpoint of a heater wire, enclosed in an evacuated bulb. The thermoelement senses the heat generated

Advanced Materials Metrology

Ongoing
Electromagnetic devices cannot operate without the interaction of electromagnetic waves with materials, and the characterization of the interface between fields and materials will be a critical task for any device or metrology development from nanoscale to larger scales. Areas of impact over the
qim image

Advanced Microwave Photonics

Ongoing
NIST is home to a broad interdisciplinary program in quantum information science. NIST is exploring multiple implementations of qubits and strategies for taking advantage of quantum effects to compute, simulate, and improve fundamental measurement strategies. Josephson junctions are at the heart of
Micrographs of kinetic inductance-based parametric amplifier

Amplifiers

Ongoing
We have developed parametric amplifiers based on two different technologies: Josephson Junctions and superconductors with high kinetic inductance, a representation of the kinetic energy of superconducting Cooper-pair charge carriers. Junction-based parametric amplifiers (JPAs) are well suited for

Publications

Measuring Out-of-Plane Permittivity of Thin Films to Millimeter Wave Frequencies

Author(s)
Florian Bergmann, Meagan Papac, Benjamin Jamroz, Nicholas Jungwirth, Bryan Bosworth, Anna Osella, Tomasz Karpisz, Lucas Enright, Eric Marksz, Angela Stelson, Christian Long, Nathan Orloff, Robert Jones
Modern microchips utilize multilayer stack-ups with many interstitial layers of dielectrics. Optimizing device performance and maximizing yield requires precise

Tools and Instruments

MBE Facility

Molecular Beam Epitaxy (MBE) Facility

The Applied Physics Division utilizes a fully automated, dual-chamber molecular beam epitaxy (MBE) system for the growth of advanced, compound semiconductor
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