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Displaying records 961 to 970 of 1000 records.
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961. The NIST Length Scale Interferometer
Series: Journal of Research (NIST JRES)
Topic: Manufacturing
Published: 7/23/1999
Authors: John S Beers, William B. Penzes
Abstract: The National Institute of Standards and Technology (NIST) interferometer for measuring graduated length scales has been in use since 1965. It was developed in response to the redefinition of the meter in 1960 from the prototype platinum-iridium bar t ...

962. The NIST/DOE Oak Ridge Centers for Manufacturing Technology Collaboration in Dimensional Metrology
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5482
Topic: Manufacturing
Published: 1/1/1994
Author: David C Stieren
Abstract: Abstract not available.

963. The National Ballistics Imaging Comparison (NBIC) Project
Topic: Manufacturing
Published: 3/10/2012
Authors: Jun-Feng Song, Theodore Vincent Vorburger, Susan M Ballou, Robert Meryln Thompson, James H Yen, Thomas B Renegar, Xiaoyu A Zheng, Richard M Silver, Martin Ols
Abstract: In response to the guidelines issued by the ASCLD/LAB-International (American Society of Crime Laboratory Directors/Laboratory Accreditation Board) to establish traceability and quality assurance in U.S. crime laboratories, a NIST/ATF joint project e ...

964. The Neolithography Consortium
Topic: Manufacturing
Published: 6/1/2000
Author: James Edward Potzick
Abstract: The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An ...

965. The Potentials of Helium Ion Microscopy for Semiconductor Process Metrology
Topic: Manufacturing
Published: 2/6/2008
Authors: Michael T Postek, Andras Vladar
Abstract: Semiconductor manufacturing is always looking for more effective ways to monitor and control the manufacturing process. Helium Ion Microscopy (HIM) presents a new approach to process monitoring which has several potential advantages over the traditio ...

966. The Role of Periodic Interferometer Errors in the Calibration of Capacitance Displacement Sensors for Nanometrology Applications
Topic: Manufacturing
Published: 1/1/2000
Authors: R Koning, Ronald G Dixson, Joseph Fu, Theodore Vincent Vorburger
Abstract: Although the role of the periodic errors of optical heterodyne interferometers in displacement measurements is fairly well understood, their influence on the calibration of other types of displacement sensors do not seem to be studied as extensively. ...

967. The Role of Space Charge in Scanned Probe Oxidation
Topic: Manufacturing
Published: 1/1/1998
Author: John A Dagata
Abstract: The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process. S ...

968. The Scanning Electron Microscope
Topic: Manufacturing
Published: 1/1/1997
Author: Michael T Postek
Abstract: The scanning electron microscope (SEM) is an important research and production tool extensively used in many phases of industry throughout the world. The popularity of the instrument results from the need to inspect and obtain information about sampl ...

969. The State of Container Security Standards
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7153
Topic: Manufacturing
Published: 10/17/2007
Authors: Shaw C Feng, Simon Paul Frechette
Abstract: As cargo container security is a critical component in the U.S. homeland security, the communication among people in a chain of custody of a container needs to be timely and effective. Since people in the container custody chain often use different c ...

970. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calib Standards With a Calibrated AFM at NIST
Topic: Manufacturing
Published: 9/29/2005
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, Edwin Ross Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...

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