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Topic Area: Manufacturing
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Displaying records 981 to 990 of 1000 records.
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981. Pixel Based Absolute Topography Test for Three Flats
Topic: Manufacturing
Published: 1/1/1998
Authors: R E. Parks, Lianzhen Shao, Christopher J. Evans
Abstract: We demonstrate a new method of performing the absolute three flat test using reflection symmetries of the surfaces and an algorithm for generating the rotation of arrays of pixel data. Most of the operations involve left/right and top/bottom flips of ...

982. Rapidly Renewable Lap: Theory and Practice
Topic: Manufacturing
Published: 1/1/1998
Authors: Christopher J. Evans, R E. Parks, David J Roderick, Michael L McGlauflin
Abstract: The rapidly renewable lap (RRL) uses a textured substrate over which thin films are slumped. The substrate provides the geometry of the lap and a localized texture, depending on the film thickness, properties, and means by which it is deformed over a ...

983. Reactive Scheduling System Implementations Using a Simulated Shop Floor
Topic: Manufacturing
Published: 1/1/1998
Author: Frank H Riddick
Abstract: Developing approaches to integrating manufacturing applications is important for increasing manufacturing productivity. A reactive scheduling system architecture has been developed that defines how to integrate scheduling technology with manufacturin ...

984. Scanning Electron Microscope Length Standards (Chapter VII in: Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology, R.M. Silver, J.L. Land, Editors, NISTIR 6036)
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6036
Topic: Manufacturing
Published: 1/1/1998
Authors: Michael T Postek, Joseph Fu
Abstract: A cross-section of length measurement capabilities fiom the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against those of other leading National Measurement Institutes. We present a variety ...

985. Technical Directions of the NIST Precision Engineering Division: 1997-2001
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 6218
Topic: Manufacturing
Published: 1/1/1998
Authors: Dennis A Swyt, Howard H. Harary, Michael T Postek, Richard M Silver, Theodore Vincent Vorburger
Abstract: This report, based on U.S. industry roadmaps and related National Institute of Standards and Technology studies, is a product of the process of strategic planning for the NIST Precision Engineering Division (PED) and presents the major technological ...

986. Testing Displacement-Measuring Interferometer Systems
Topic: Manufacturing
Published: 1/1/1998
Authors: Jack A Stone Jr, Martin Schroeck, Michael T. Stocker
Abstract: We have made a study of one method for testing displacement-measuring interferometer systems, a modified back-to-back comparison, that automatically compensates for changes in the optical path length between the two interferometers.  Although th ...

987. The DOE2000 Materials MicroCharacterization Collaboratory
Topic: Manufacturing
Published: 1/1/1998
Authors: E Voelkl, K Alexander, J Mabon, M O'Keefe, Michael T Postek, M Wright, N J Zaluzec
Abstract: The Materials Microcharacterization Collaboratory (MMC) was created last year as a pilot project within the U.S. Department of Energy''s DOE2000 program. The DOE2000 program has, as its main goals, to develop improved capabilities for solving DOE''s ...

988. The Role of Space Charge in Scanned Probe Oxidation
Topic: Manufacturing
Published: 1/1/1998
Author: John A. Dagata
Abstract: The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process. S ...

989. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST
Topic: Manufacturing
Published: 1/1/1998
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, E. C. Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...

990. Understanding Scanned Probe Oxidation of Silicon
Topic: Manufacturing
Published: 1/1/1998
Authors: John A. Dagata, T Inoue, J Itoh, H Yokoyama
Abstract: A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified exper ...

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