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991. Scattering by a Dielectric Wedge: Oblique Incidence
Topic: Manufacturing
Published: 1/1/1995
Author: Egon Marx
Abstract: The scattering of a plane monochromatic wave by an infinite dielectric wedge is discussed for arbitrary direction of incidence and polarization. Two sets of coupled integral equations for an unknown surface function are derived. The behavior of the f ...

992. Summary Report: Second Workshop in Industrial Applications of Scanned Probe Microscopy
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 5752
Topic: Manufacturing
Published: 1/1/1995
Authors: John A Dagata, A Diebold, C Shih, R Colton
Abstract: The Second Workshop on Industrial Applications of Scanned Probe Microscopy (IASPM) was held at the National Institute of Standards and Technology (NIST) Gaithersburg on May 2-3, 1995. The meeting, co-sponsored by NIST, SEMATECH, the American Society ...

993. User's Manual for the Program MONEL-I: Monte Carlo Simulation of SEM Signals for Linewidth Metrology
Series: Technical Note (NIST TN)
Report Number: 400
Topic: Manufacturing
Published: 1/1/1995
Authors: J R. Lowney, Egon Marx
Abstract: This user's manual is a guide to the FORTRAN code MONSEL-I which is a Monte Carlo simulation of the transmitted and backscattered electron signals in a scanning electron microscope (SEM) associated with a line specimen with a trapezoidal cross sectio ...

994. Working and Check Standards for NIST Surface and Microform Measurements
Topic: Manufacturing
Published: 1/1/1995
Authors: Jun-Feng Song, Theodore Vincent Vorburger
Abstract: Different working standards and check standards are used in the NIST surface and microform measurement laboratory for calibrating instruments, establishing measurement traceability and control measurement uncertainty. The basic requirements for these ...

995. Workshop Report 1: Scanning Electron Microscope Metrology as Related to a Defined Edge Structure
Topic: Manufacturing
Published: 1/1/1995
Authors: Michael T Postek, Andras Vladar, G Banke, T Reilly
Abstract: An accurate electron beam model is primary to the understanding of the SEM image. Several independently developed Monte Carlo models have been introduced for this purpose and a modeling round-robin has just been conducted to compare the results of th ...

996. National Institute of Standards and Technology (NIST) J93 Project Interim Report
Topic: Manufacturing
Published: 12/22/1994
Authors: Michael T Postek, James Edward Potzick, J Schneir, T Mcwaid, Robert D. Larrabee
Abstract: Unavailable.

997. Accuracy in Integrated Circuit Dimensional Measurements
Topic: Manufacturing
Published: 12/1/1994
Author: James Edward Potzick
Abstract: The measurement of critical dimensions of features on integrated circuits and photomasks is modeled as the comparison of the images of the test object and of a standard object in a measuring device. A length measuring instrument is then a comparator. ...

998. Improving Photomask Linewidth Measurement Accuracy via Emulated Stepper Aerial Image Measurement
Topic: Manufacturing
Published: 12/1/1994
Author: James Edward Potzick
Abstract: Photomask linewidth measurements are needed for vendor/buyer communication, for developing specifications and ensuring that products meet specifications, and sometimes for legal compliance. Linewidths are also measured for process monitoring for eith ...

999. Parameters Characterizing a Critical Dimension Measurement
Topic: Manufacturing
Published: 12/1/1994
Authors: Robert D. Larrabee, Michael T Postek
Abstract: There are a number of parameters used to characterize a measurement result for the purposes of specifying its value for the intended purpose. Precision (variability) and accuracy (correctness) are two of the more often used parameters and, like many ...

1000. Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Topic: Manufacturing
Published: 11/1/1994
Authors: Richard M Silver, John A Dagata, H. W. Tseng
Abstract: Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar ...

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