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911. High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope
Topic: Manufacturing
Published: 5/1/1996
Authors: J R. Lowney, Andras Vladar, Michael T Postek
Abstract: Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced l ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820795

912. International Comparison of Photomask Linewidth Standards: U.S. (NIST) and U.K. (NPL)
Topic: Manufacturing
Published: 5/1/1996
Authors: James Edward Potzick, J Nunn
Abstract: Photomask linewidth standards serve as primary standards for the calibration of photomask metrology tools and are available from the national standards organizations of several countries. These standards are often in the form of chrome-on-quartz phot ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820814

913. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Topic: Manufacturing
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820789

914. New Algorithm for the Measurement of Pitch in Metrology Instruments
Topic: Manufacturing
Published: 5/1/1996
Authors: Nien F Zhang, Michael T Postek, Robert D. Larrabee, L Carroll, William J. Keery
Abstract: Traditionally, the measurement of pitch in metrology instruments is thought to be a benign self-compensating function. However, as the measurement uncertainty of metrology instruments is pushed to the nanometer level, evaluation of the performance of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820831

915. SEM Performance Evaluation Using the Sharpness Criterion
Topic: Manufacturing
Published: 5/1/1996
Authors: Michael T Postek, Andras Vladar
Abstract: Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820809

916. Toward Accurate Linewidth Metrology Using Atomic Force Microscopy and Tip Characterization
Topic: Manufacturing
Published: 5/1/1996
Authors: Ronald G Dixson, J Schneir, T Mcwaid, N. Sullivan, V W. Tsai, S Zaidi, S Brueck
Abstract: As the critical dimensions of integrated circuit features decrease toward 0.18 um, feature width measurements with nanometer level accuracy will become increasingly important to the semiconductor processing industry. Atomic force microscopy (AFM) off ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820788

917. Models for Relating Scanning Electron Microscopy Images to Measured Artifacts
Topic: Manufacturing
Published: 4/1/1996
Authors: Michael T Postek, Andras Vladar, J R. Lowney
Abstract: A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results wer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820810

918. Scanned Probe Microscope Tip Characterization Without Calibrated Tip Characterizers
Topic: Manufacturing
Published: 3/1/1996
Author: John S Villarrubia
Abstract: In scanned probe microscopy the image is a combination of information from the sample and the tip. In order to reconstruct the true surface geometry, it is necessary to know the actual tip shape. It has been proposed that this shape may be reconstruc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820829

919. Test Optics Error Removal
Topic: Manufacturing
Published: 3/1/1996
Authors: Christopher J. Evans, R Kestner
Abstract: Wave-front or surface errors may be divided into rotationally symmetric and nonrotationally symmetric terms. It is shown that if either the test part or the reference surface in an interferometric test is rotated to N equally spaced positions about t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820792

920. Chemical Aspects of Tool Wear in Single Point Diamond Turning
Topic: Manufacturing
Published: 1/1/1996
Authors: E W Paul, Christopher J. Evans, A Mangamelli, Michael L McGlauflin, Robert S. Polvani
Abstract: A hypothesis is proposed that ascribes chemical wear of diamond tools to the presence of unpaired d electrons in the sample being machined. This hypothesis is used to explain a range of results for metals, alloys, and other materials including electr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820801



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