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Displaying records 991 to 1000.
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991. Testing Displacement-Measuring Interferometer Systems
Topic: Manufacturing
Published: 1/1/1998
Authors: Jack A Stone Jr, Martin Schroeck, Michael T. Stocker
Abstract: We have made a study of one method for testing displacement-measuring interferometer systems, a modified back-to-back comparison, that automatically compensates for changes in the optical path length between the two interferometers.  Although th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823081

992. The DOE2000 Materials MicroCharacterization Collaboratory
Topic: Manufacturing
Published: 1/1/1998
Authors: E Voelkl, K Alexander, J Mabon, M O'Keefe, Michael T Postek, M Wright, N J Zaluzec
Abstract: The Materials Microcharacterization Collaboratory (MMC) was created last year as a pilot project within the U.S. Department of Energy''s DOE2000 program. The DOE2000 program has, as its main goals, to develop improved capabilities for solving DOE''s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820921

993. The Role of Space Charge in Scanned Probe Oxidation
Topic: Manufacturing
Published: 1/1/1998
Author: John A. Dagata
Abstract: The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process. S ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820888

994. The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST
Topic: Manufacturing
Published: 1/1/1998
Authors: V W. Tsai, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, R Koning, Richard M Silver, E. C. Williams
Abstract: Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823099

995. Understanding Scanned Probe Oxidation of Silicon
Topic: Manufacturing
Published: 1/1/1998
Authors: John A. Dagata, T Inoue, J Itoh, H Yokoyama
Abstract: A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified exper ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821775

996. Vibration of a Room-Sized Airspring-Supported Slab
Topic: Manufacturing
Published: 1/1/1998
Authors: H Amick, B Sennewald, N C Pardue, E Clayton Teague, Brian R Scace
Abstract: This paper reports the results of the finite element analysis and in situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab. The slab was constructed as a design prototype for next-generation metrology laboratories at the Nat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820887

997. Voltage Modulation Scanned Probe Oxidation (Abstract)
Topic: Manufacturing
Published: 1/1/1998
Authors: John A. Dagata, T Inoue, J Itoh, K Matsumoto, H Yokoyama
Abstract: This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823101

998. Application of Transmission Electron Detection to SCALPEL Mask Metrology
Topic: Manufacturing
Published: 11/1/1997
Authors: R Farrow, Michael T Postek, William J. Keery, Samuel N Jones, J R. Lowney, M Blakey, L Fetter, J Griffith, J E Liddle, L C Hopkins, H A Huggins, M Peabody,, A Novembre
Abstract: Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820894

999. Application of Trasmission Electron Detection to Scalpel Mask Metrology
Topic: Manufacturing
Published: 11/1/1997
Authors: R Farrow, Michael T Postek, William J. Keery, Samuel N Jones, J R. Lowney, M Blakey, L Fetter, A Liddle, L C Hopkins, H A Huggins, M Peabody, A Novembre, J Griffith
Abstract: Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823090

1000. Applications of the Rapidly Renewable Lap
Topic: Manufacturing
Published: 11/1/1997
Authors: R E. Parks, E Robert, Christopher J. Evans, David J Roderick, J David, John A. Dagata
Abstract: The rapidly renewable lap is based on the simple concept of generating the figure needed in a lap substrate and then replicating it into a thin film slumped over the substrate. Based on this concept, we describe how efficient laps can be constructed ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821593



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