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Displaying records 631 to 640 of 741 records.
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631. State-of-the-Art Comparability of Corrected Emission Spectra-Part II: Peer-toPeer Assessment of Calibration Performance Using Spectral Fluorescence Standards
Topic: Electronics & Telecommunications
Published: 2/28/2012
Authors: Paul C DeRose, Joanne C Zwinkels, Bernd Ebert
Abstract: The tremendous growth of fluorescence applications in the life and material sciences has proceeded largely without sufficient concern for the reliability and uncertainties related to the characterization and performance validation of fluorescence ins ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907887

632. Statistical Analysis of 4 MN Force Range Key Comparison
Report Number: 823017
Topic: Electronics & Telecommunications
Published: 11/27/2007
Author: Thomas William Bartel
Abstract: The factors contributing to the uncertainty are discussed for the measurements that were conducted for the 2 MN and 4MN force values of the very high force CIPM key comparison. Details of the statistical analysis by the pilot institute, NIST, are pro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823017

633. Statistical Error Analysis of Time and Polarization Resolved Ultrasonic Measurements
Topic: Electronics & Telecommunications
Published: 1/1/1997
Authors: D Xiang, Gerald V. Blessing, Nelson N. Hsu
Abstract: The time and polarization resolved ultrasonic technique which we previously developed has been demon-strated to simultaneously provide measurements of the wave velocity in the coupling liquid, and the leaky surface wave and leaky longitudinal wave ve ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820073

634. Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices
Topic: Electronics & Telecommunications
Published: 3/22/2006
Author: Allen R Hefner Jr
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Powe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32207

635. Status of Reference Waveform Standards Development at NIST
Topic: Electronics & Telecommunications
Published: 6/1/1982
Authors: J R Andrews, N. S. Nahman, Barry A. Bell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31150

636. Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition
Topic: Electronics & Telecommunications
Published: 3/19/2007
Authors: Allen R Hefner Jr, Sharon Beermann-Curtin
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize industriall and military power generation, transmission and distribution systems. The DARPA Wide Bandgap Semiconductor Technology ( ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32598

637. Stochastic Properties of Partial-Discharge Phenomena: A Review
Topic: Electronics & Telecommunications
Published: 11/1/1991
Author: Richard J. Van Brunt
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=28540

638. Strain rate effect on single PPTA fiber tensile behaviour
Topic: Electronics & Telecommunications
Published: 7/28/2013
Authors: Jae Hyun Kim, Nathanael A Heckert, Stefan D Leigh, Walter G McDonough, Kirk D Rice, Gale Antrus Holmes
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913925

639. Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects
Topic: Electronics & Telecommunications
Published: 1/1/2007
Authors: Robert R Keller, Roy Howard Geiss, Nicholas Barbosa, Andrew J Slifka, David Thomas Read
Abstract: We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=50338

640. Strong Casimir force reduction by metallic surface nanostructuring
Topic: Electronics & Telecommunications
Published: 9/27/2013
Authors: Francesco Intravaia, Stefan T. Koev, Il Woong Jung, Albert A. Talin, Paul S Davids, Ricardo Decca, Vladimir A Aksyuk, Diego A. R. Dalvit, Daniel Lopez
Abstract: The Casimir force is a quantum-mechanical interaction arising from vacuum fluctuations of the electromagnetic (EM) field and is technologically significant in micro- and nanomechanical systems. Despite rapid progress in nanophotonics, the goal of e ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910133



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