NIST logo

Publications Portal

You searched on:
Topic Area: Electron Physics
Sorted by: title

Displaying records 51 to 60 of 100 records.
Resort by: Date / Title


51. Frequency-Dependent Charge-Pumping: The Depth Question Revisited
Topic: Electron Physics
Published: 5/1/2010
Authors: Fan Zhang, Kin P Cheung, Jason P Campbell, John S Suehle
Abstract: A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship betw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904997

52. GaAs Spin Polarized Electron Source
Topic: Electron Physics
Published: 4/1/1980
Authors: Daniel Thornton Pierce, Robert Celotta, G Wang, W Unertl, A Galejs, C Kuyatt, S Mielczarek
Abstract: The design, construction, operation, and performance of a spin polarized electron source utilizing photoemission from negative electron affinity (NEA) GaAs are presented in detail. A polarization of 43{plus or minus}2% is produced using NEA GaAs (100 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620179

53. Graphene Production for Electrical Metrology
Topic: Electron Physics
Published: 6/1/2011
Authors: Randolph E Elmquist, David B Newell, George R Jones, Felipe Leon Marquez-Hernandez, Mariano A. Real, Tian T. Shen
Abstract: Many material and electronic contributions must be favorable to produce devices with strong quantum Hall effect (QHE) plateaus that are suitable for precise resistance metrology. Even so, metrologically interesting QHE plateaus have been observed in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907725

54. Graphene: Plane and Simple Electrical Metrology?
Topic: Electron Physics
Published: 12/7/2011
Authors: Randolph E Elmquist, Felipe Hernandez-Marquez, Mariano Real, Tian T. Shen, David B Newell, Colin James Jacob, George R Jones
Abstract: The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and h ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908884

55. Increased Sherman Function in Electron Spin Analyzers Using a Bulk Thorium Target
Topic: Electron Physics
Published: 1/1/1989
Authors: Jabez J McClelland, M Scheinfein, Daniel Thornton Pierce
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620327

56. Intensities of infrared transitions in N^2^O and H^d2^CO by electron impact spectroscopy
Topic: Electron Physics
Published: 11/1/1976
Authors: C Kuyatt, S Mielczarek, Marc Abbott Weiss
Abstract: Measurements of relative intensities of infrared transitions in N^d2^O and H^d2^CO have been made using forward inelastic scattering of 100 eV electrons. Agreement with previous infrared and electron impact measurements is satisfactory, showing that ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620124

57. Interface scattering in polycrystalline thermoelectrics
Topic: Electron Physics
Published: 3/24/2014
Authors: Adrian Popescu, Paul M Haney
Abstract: We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915037

58. Introduction to Electron and Ion Optics
Topic: Electron Physics
Published: 7/1/1974
Author: P Dahl
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620060

59. Landau Levels and Band Bending in Few-Layer Epitaxial Graphene
Topic: Electron Physics
Published: 4/18/2011
Authors: Hongki Min, Shaffique Adam, Young J. Song, Joseph A Stroscio, Mark D Stiles, Allan H. MacDonald
Abstract: The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907652

60. Magnetic dynamics with spin transfer torques near the Curie temperature.
Topic: Electron Physics
Published: 9/24/2009
Authors: Paul M Haney, Mark D Stiles
Abstract: In this paper we explore the combined action of large thermal fluctuations and spin transfer torques on the behavior of magnetic layers in spin valves. We find that at temperatures near Tc, spin currents can measurably change the size of the magnet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902578



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series