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Displaying records 11 to 16.
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11. Formation and structure of 360 and 540 degree domain walls in thin magnetic stripes
Topic: Electron Physics
Published: 2/10/2012
Authors: Youngman Jang, Samuel R. Bowden, Mark Mascaro, John Unguris, Caroline Ross
Abstract: 360˚, 540˚ and other complex transverse domain walls have been created in narrow Co wires connected to injection pads by cycling a magnetic field perpendicular to the wire length. The composite walls, formed by impingement of 180˚ tran ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910019

12. Graphene Production for Electrical Metrology
Topic: Electron Physics
Published: 6/1/2011
Authors: Randolph E Elmquist, David B Newell, George R Jones, Felipe Leon Marquez-Hernandez, Mariano A. Real, Tian T. Shen
Abstract: Many material and electronic contributions must be favorable to produce devices with strong quantum Hall effect (QHE) plateaus that are suitable for precise resistance metrology. Even so, metrologically interesting QHE plateaus have been observed in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907725

13. Graphene: Plane and Simple Electrical Metrology?
Topic: Electron Physics
Published: 12/7/2011
Authors: Randolph E Elmquist, Felipe Hernandez-Marquez, Mariano Real, Tian T. Shen, David B Newell, Colin James Jacob, George R Jones
Abstract: The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and h ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908884

14. Landau Levels and Band Bending in Few-Layer Epitaxial Graphene
Topic: Electron Physics
Published: 4/18/2011
Authors: Hongki Min, Shaffique Adam, Young J. Song, Joseph A Stroscio, Mark D Stiles, Allan H. MacDonald
Abstract: The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907652

15. NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report
Topic: Electron Physics
Published: 1/1/2011
Author: John S Villarrubia
Abstract: This report summarizes results from a two-year project to develop a simulator for electron beam inspection and critical dimension scanning electron microscope (SEM) inline metrology tools. The development attempts to improve on prior simulators and d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907582

16. Weak Localization, Spin Relaxation, and Spin-Diffusion: Crossover Between Weak and Strong Rashba Coupling Limits
Topic: Electron Physics
Published: 9/17/2014
Authors: Yasufumi Araki, Guru Bahadur S Khalsa, Allan H. MacDonald
Abstract: Disorder scattering and spin-orbit coupling are together responsible for the diffusion and relaxation of spin-density in time-reversal invariant systems. We study spin-relaxation and diffusion in a two-dimensional electron gas with Rashba spin-orbit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916181



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