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11. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B. Schlager, Aric Warner Sanders
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
12. Temperature dependence of the diffusive conductivity of bilayer graphene
Shaffique Adam, Mark D Stiles
Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature
dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier
density. We find that the temperature d ...