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Displaying records 11 to 12.
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11. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Nanophysics
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467

12. Temperature dependence of the diffusive conductivity of bilayer graphene
Topic: Nanophysics
Published: 8/24/2010
Authors: Shaffique Adam, Mark D Stiles
Abstract: Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the temperature d ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904658



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