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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 31 to 40 of 135 records.
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31. Energy-Level Alignment and Work Function Shifts for Thiol-Bound Monolayers of Conjugated Molecules Self-Assembled on Ag, Cu, Au, and Pt
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/0007
Authors: Christopher D Zangmeister, Laura B. Picraux, Roger D van Zee, Yuxing Yao, J M Tour
Abstract: Photoemission spectra have been used to determine the energy-level alignment and work function of monolayers of 4,4'-bis-(phenylethynyl)benzenethiol, 2 naphthalene thiol, and 3-(naphthalen-2-yl)propane-1-thiol self-assembled on Ag, Cu, Au, and Pt. Fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830989

32. Enhanced carrier transport along edges of graphene devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/20/2012
Authors: Jungseok Chae, Suyong S. Jung, Sungjong Woo, Hongwoo Baek, Jeonghoon Ha, Young J. Song, Young-Woo Son, Nikolai B Zhitenev, Joseph A Stroscio, Young Kuk
Abstract: The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microsc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906187

33. Enhancing molecular flux through nanopores via attractive interactions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 11/1/2006
Authors: John J Kasianowicz, Tam Nguyen, Vincent M Stanford
Abstract: The classic experiments by Galvani and his colleagues in the 1790s led him to suggest that neural conduction and muscle contraction are governed by a form of animal electricity. Nearly 100 years later, Santiago Ramon y Cajal?s use of Golgi stains pro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32378

34. Epitaxial Graphene Electronic Structure And Transport
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/2/2010
Authors: Joseph A Stroscio, Walt A. de Heer, Claire Berger, Xiaosong Wu, Yike Hu, Ming Ruan, Phillip First, Robert Haddon, Benjamin Piot, Clement Faugeras, Marek Potemski
Abstract: Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is pres ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905039

35. Epitaxial Graphenes on Silicon Carbide
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/1/2010
Authors: Joseph A Stroscio, Walt A. de Heer, Phillip First, Claire Berger, Thomas Seyller, Jeong-Sun Moon
Abstract: The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC is much different than growth on the C-terminated SiC surface, and discu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904592

36. Evolution of Microscopic Localization in Graphene in a Magnetic Field: From Scattering Resonances to Quantum Dots.
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/9/2011
Authors: Suyong S. Jung, Gregory M. Rutter, Nikolai Nikolayevich Klimov, David B Newell, Irene G. Calizo, Angela R Hight Walker, Nikolai B Zhitenev, Joseph A Stroscio
Abstract: Graphene is a unique material displaying high-mobility transport in monolayer-thin films. However, its properties are strongly dependent on interactions with substrates, local charges and environment. Scanned probe microscopies can be used to local ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905753

37. Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2007
Authors: Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A Allen, Michael W Cresswell
Abstract: This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32747

38. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

39. Fabrication of silicon-based Molecular Electronic Structures Using Flip Chip Lamination
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/19/2011
Authors: Christina Ann Hacker, Michael A Walsh, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908430

40. Fabrication with Flip-Chip Lamination
Topic: Nanoelectronics and Nanoscale Electronics
Published: 11/15/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: Fabrication with Flip-Chip Lamination , Mariona Coll, DR Hines, CA Richter, CA Hacker, Nanotechnology colloquium, Wake Forest University, 11-09.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907071



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