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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 131 to 140 of 142 records.
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131. Theory of Ballistic Electron Emission Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi^d2^-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a mode ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620403

132. Theory of Photo-induced Resonant Tunneling in Heterojunctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: S Apell, David R. Penn, Mark D Stiles
Abstract: The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiple ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620405

133. Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/30/2008
Authors: Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S Suehle, Curt A Richter, Qiliang Li, Eric Vogel
Abstract: In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to inv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32936

134. Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2013
Authors: Hao Zhu, Curt A Richter, Erhai Zhao, John E Bonevich, William Andrew Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A Kirillov, James E Maslar, D. E Ioannou, Qiliang Li
Abstract: Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampere ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912994

135. Towards Low-Noise Flexible Electronics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/6/2009
Authors: Oana Jurchescu, Hao Xiong, D A Mourey, D Zhao, J Sun, Curt A Richter, John E Anthony, Thomas Jackson, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907142

136. Towards clean and crackless transfer of graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

137. Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/4/2007
Authors: Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Abstract: Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831436

138. Transport of Quantum States and Separation of Ions in a Dual RF Ion Trap
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/1/2002
Authors: Mary A. Rowe, A. Ben-Kish, B. DeMarco, D. Leibfried, V. Meyer, James A Beall, J. Britton, J. Hughes, Wayne M Itano, Branislav M. Jelenkovic, C. Langer, T. Rosenband, David J Wineland
Abstract: We have investigated ion dynamics associated with a dual linear ion trap where ions can be stored in and moved betweenn two distinct locations. Such a trap is a building block for a system to engineer arbitrary quantum states of ion ensembles. Specif ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30826

139. Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/7/2009
Authors: Mariona Coll Bau, Christina Ann Hacker, Lauren H. Miller, Daniel R. Hines, E. C. Williams, Curt A Richter
Abstract: In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monola ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900902

140. Ultraviolet Photoemission Spectra of Para-Phenylene-Ethynylene Thiols Chemisorbed on Gold
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/2008
Authors: Christopher D Zangmeister, Roger D van Zee, Steven W Robey, N E Gruhn, Yuxing Yao, J M Tour
Abstract: Photoemission spectra of para-phenylene-ethynylene thiols chemisorbed on gold have been measured. Four compounds were studied: 4,4'-bis(phenylethynyl)-benzenethiol, 4 (phenylethynyl)benzenethiol, 4-ethynylbenzenethiol, and benzenethiol. The spectra w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830991



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