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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 111 to 120 of 135 records.
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111. Structural analysis of multilayer graphene via atomic moiré interferometry
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/24/2010
Authors: David L. Miller, Kevin Kubista, Gregory M. Rutter, Ming Ruan, Walt A. de Heer, Phillip First, Joseph A Stroscio
Abstract: The rotation of stacked honeycomb lattices produces an observable moir e pattern in the topography of scanning tunneling microscopy images, which have long been observed in highly-oriented pyrolytic graphite due to rotation of the surface layer relat ...

112. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker

113. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/2/2008
Authors: Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
Abstract: We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...

114. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/15/2012
Authors: Dohun Kim, Sungjae Cho, Nicholas P. Butch, Paul Syers, Kevin Kirshenbaum, Shaffique Adam, Johnpierre Paglione, Michael S. Fuhrer
Abstract: The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport ex ...

115. Survey Results Help Set International Nano-Electrotechnical Standardization Priorities
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/3/2009
Author: Herbert S Bennett

116. Switching in Flexible Titanium Oxide Memristors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/25/2010
Authors: Joseph Leo Tedesco, Nadine Emily Gergel-Hackett, Laurie A. Stephey, Christina Ann Hacker, Curt A Richter
Abstract: In this study, memristors were fabricated on flexible polyethylene terephthalate (PET) substrates with aluminum contacts and a titanium dioxide film formed with a sol-gel of titanium isopropoxide and ethanol. To study the electric field dependence of ...

117. TaOx Memristive Devices with Ferromagnetic Electrodes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter

118. Temperature dependence of adiabatic spin transfer torque and current polarization in Ni80Fe20 by spin wave Doppler measurements
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/23/2010
Authors: Meng Zhu, Cindi L Dennis, Robert D McMichael
Abstract: A spin wave Doppler technique is used to measure the temperature dependence of both the magnetization drift velocity and the current polarization in current-carrying Ni^d80^Fe^d20^ wires. For current densities of 10^u11^ A/m2, we obtain magnetizatio ...

119. Temperature dependence of spin-torque-driven self-oscillators
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/15/2009
Authors: William H Rippard, Matthew R Pufall, Thomas Cecil, Thomas J Silva, Stephen E Russek, M. L. Schneider
Abstract: We have measured the temperature dependence of spin-torque-driven self-oscillations in point-contact nanooscillators for both in-plane and out-of-plane applied fields. We find that the linewidth for both field geometries is qualitatively similar. In ...

120. The Challenge of Measuring Defects in Nanoscale Dielectrics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/26/2008
Authors: Kin P Cheung, John S Suehle
Abstract: Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In so ...

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