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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 11 to 20 of 139 records.
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11. Graphene Epitaxial Growth on SiC(0001) for Resistance Standards
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/1/2012
Authors: Mariano A. Real, Tian T. Shen, George R Jones, Randolph E Elmquist, Johannes A Soons, Albert Davydov
Abstract: Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene‰s performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910566

12. Memristors with Flexible Electronic Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/1/2012
Authors: Nadine Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter
Abstract: In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically-inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906826

13. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/15/2012
Authors: Dohun Kim, Sungjae Cho, Nicholas P. Butch, Paul Syers, Kevin Kirshenbaum, Shaffique Adam, Johnpierre Paglione, Michael S. Fuhrer
Abstract: The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910490

14. Nanoscale Fullerene Compression of an Yttrium Carbide Cluster
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/13/2012
Authors: Jianyuan Zhang, Fuhrer Tim, Wujun Fu, Jiechao Ge, Daniel W Bearden, Jerry Dallas, Duchamp James, Kenneth Walker, Hunter Champion, Hugo Azurmendi, Kim Harich, Harry C. Dorn
Abstract: The encapsulation of clusters (or small molecules) in spheroidal fullerene cages provides a unique isolated environment that is important in describing their shape, dynamics, and physical properties. For the case of yttrium carbide clusters, we fin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910253

15. Electronic properties of multilayer graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/31/2012
Author: Hongki Min
Abstract: In this chapter, we study the electronic structure of arbitrarily stacked multilayer graphene in the absence or presence of magnetic field. Energy band structure and Landau level spectrum are obtained using a pi-orbital continuum model with nearest-n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906671

16. Enhanced carrier transport along edges of graphene devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/20/2012
Authors: Jungseok Chae, Suyong S. Jung, Sungjong Woo, Hongwoo Baek, Jeonghoon Ha, Young J. Song, Young-Woo Son, Nikolai B Zhitenev, Joseph A Stroscio, Young Kuk
Abstract: The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microsc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906187

17. Spin transport in memristive devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149

18. Towards clean and crackless transfer of graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/2/2012
Authors: Xuelei X. Liang, Brent A Sperling, Irene G. Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Q. Zhang, Yaw S Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A Richter
Abstract: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a ,modified RCA c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908399

19. Frontiers of Characterization and Metrology for Nanoelectronics: 2011
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/28/2011
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910545

20. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358



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