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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 101 to 110 of 136 records.
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101. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

102. Liposome-Templated Supramolecular Assembly of Responsive Alginate Nanogels
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/14/2008
Authors: Jennifer S. Hong, Wyatt N Vreeland, Silvia H. De Paoli Lacerda, Laurie E Locascio, Michael Gaitan, Srinivasa R. Raghavan
Abstract: Nanosized gel particles (nanogels) are of interest for a variety of applications, including controlled release of drugs and single-molecule encapsulation. Here, we employ the cores of nanoscale liposomes as reaction vessels to template the assembly o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32779

103. Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/17/2008
Authors: David J Gundlach, James Royer, Behrang H Hamadani, Lucile C. Teague, Andrew J Moad, Oana Jurchescu, Oleg A Kirillov, Lee J Richter, James G. Kushmerick, Curt A Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E Anthony
Abstract: Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32683

104. Preparation of Nanoparticles by Continuous-Flow Microfluidics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/15/2008
Authors: Andreas Jahn, Joseph Earl Reiner, Wyatt N Vreeland, Don DeVoe, Laurie E Locascio, Michael Gaitan
Abstract: We review a variety of micro- and nanoparticle formulations produced with microfluidic methods. A diverse variety of approaches to generate micro-scale and nano-scale particles have been reported. Here we emphasize the use of microfluidics, specifica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32842

105. Probing molecules in integrated solid-state silicon junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/12/2008
Authors: Wenyong Wang, Adina Scott, Nadine Emily Gergel-Hackett, Christina Ann Hacker, David Janes, Curt A Richter
Abstract: In this research work, we fabricate integrated Si-SAMs-metal devices using the ?soft? top metal deposition technique and probe their electronic properties with IETS characterizations. IETS confirmed the existence of molecular species in the device ar ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32700

106. In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/2008
Authors: James E Maslar, Wilbur S. Hurst, Donald R Burgess Jr, William Andrew Kimes, Nhan V Nguyen, Elizabeth F Moore, Joseph Terence Hodges
Abstract: Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications.  In situ monitoring of ALD processes has the potential to yield insight ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832216

107. Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2007
Authors: Bin Li, Min K. Kang, Kuan Lu, Rui Huang, Paul S. Ho, Richard A Allen, Michael W Cresswell
Abstract: This letter demonstrates a method to fabricate single-crystal Si nanolines, with a rectangular cross section and atomically flat sidewalls. The high quality of these nanolines leads to superb mechanical properties, with the strain to fracture estimat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32747

108. The Detection and Characterization of Ions, DNA and Proteins with Nanometer-Scale Pores
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/1/2007
Authors: John J Kasianowicz, Jeffrey C. Lerman, Sarah E Henrickson, Martin Misakian, Rekha Panchal, Kelly Halverson, Sina Bavari, Tam Nguyen, Rick Gussio, Devanand K. Shenoy, Vincent M Stanford
Abstract: Protein ion channels are nanometer-scale pores that are central to many biological processes, including the sensing of a wide variety of molecules. They have also demonstrated their potential for use in the sensitive and selective detection of ions, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32377

109. Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/4/2007
Authors: Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Abstract: Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831436

110. Building Electronic Function Into Nanoscale Molecular Architectures
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7439
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/30/2007
Authors: H D Abruna, M Ratner, Roger D van Zee
Abstract: The use of molecules in electronic circuit has been the subject of recent study. Experimentally, two-terminal, molecular rectifiers have been demonstrated, three-terminal, single-molecule transistors demonstrated, and electromechanical molecular swit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831010



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