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You searched on: Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 11 to 20 of 142 records.
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11. Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2013
Authors: Hao Zhu, Curt A Richter, Erhai Zhao, John E Bonevich, William Andrew Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A Kirillov, James E Maslar, D. E Ioannou, Qiliang Li
Abstract: Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampere ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912994

12. Modeling Scanning Electron Microscope Measurements with Charging
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/3/2013
Author: John S Villarrubia
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912857

13. ELECTRICAL AND PHYSICAL CHARACTERIZATION OF BILAYER CARBOXYLIC ACID FUNCTIONALIZED MOLECULAR LAYERS
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/30/2013
Authors: Sujitra Jeanie Pookpanratana, Joseph William Robertson, Cherno Jaye, Daniel A Fischer, Curt A Richter, Christina Ann Hacker
Abstract: We have used Flip Chip Lamination (FCL) to form monolayer and bilayer molecular junctions of carboxylic acid-containing molecules with Cu atom incorporation. Carboxylic acid-terminated monolayers are self-assembled onto ultrasmooth Au using thiol che ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912203

14. Graphene Epitaxial Growth on SiC(0001) for Resistance Standards
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/1/2012
Authors: Mariano A. Real, Tian T. Shen, George R Jones, Randolph E Elmquist, Johannes A Soons, Albert Davydov
Abstract: Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene‰s performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910566

15. Memristors with Flexible Electronic Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/1/2012
Authors: Nadine Gergel-Hackett, Joseph Leo Tedesco, Curt A Richter
Abstract: In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically-inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906826

16. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/15/2012
Authors: Dohun Kim, Sungjae Cho, Nicholas P. Butch, Paul Syers, Kevin Kirshenbaum, Shaffique Adam, Johnpierre Paglione, Michael S. Fuhrer
Abstract: The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910490

17. Nanoscale Fullerene Compression of an Yttrium Carbide Cluster
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/13/2012
Authors: Jianyuan Zhang, Fuhrer Tim, Wujun Fu, Jiechao Ge, Daniel W Bearden, Jerry Dallas, Duchamp James, Kenneth Walker, Hunter Champion, Hugo Azurmendi, Kim Harich, Harry C. Dorn
Abstract: The encapsulation of clusters (or small molecules) in spheroidal fullerene cages provides a unique isolated environment that is important in describing their shape, dynamics, and physical properties. For the case of yttrium carbide clusters, we fin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910253

18. Electronic properties of multilayer graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/31/2012
Author: Hongki Min
Abstract: In this chapter, we study the electronic structure of arbitrarily stacked multilayer graphene in the absence or presence of magnetic field. Energy band structure and Landau level spectrum are obtained using a pi-orbital continuum model with nearest-n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906671

19. Enhanced carrier transport along edges of graphene devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/20/2012
Authors: Jungseok Chae, Suyong S. Jung, Sungjong Woo, Hongwoo Baek, Jeonghoon Ha, Young J. Song, Young-Woo Son, Nikolai B Zhitenev, Joseph A Stroscio, Young Kuk
Abstract: The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microsc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906187

20. Spin transport in memristive devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149



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