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Topic Area: Characterization, Nanometrology, and Nanoscale Measurements
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Displaying records 21 to 30 of 211 records.
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21. Calibration of 1 nm SiC Step Height Standards
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/31/2010
Authors: Theodore Vincent Vorburger, Albert M. Hilton, Ronald G Dixson, Ndubuisi George Orji, J. A. Powell, A. J. Trunek, P. G. Neudeck, P. B. Abel
Abstract: We aim to develop and calibrate a set of step height standards to meet the range of steps useful for nanotechnology. Of particular interest to this community is the calibration of atomic force microscopes operating at their highest levels of magnifi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905193

22. Carbon Nanotube Nucleation Driven by Catalyst Morphology Dynamics
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 11/14/2011
Authors: Elena Pigos, Evgeni S Penev, Morgana A Ribas, Renu Sharma, Boris I. Yakobson, Avetik R. Harutyunyan
Abstract: In situ observation of carbon nanotube nucleation process accompanied by catalyst particle dynamic morphology reconstruction is considered within a thermodynamic approach, and reveals the driving force for the liftoff,a crucial event in the nanotube ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908296

23. Carbon nanotube applications to scanning probe microscopy for next generation semiconductor metrology
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 8/3/2010
Authors: Victor H. Vartanian, Paul McClure, Vladimir Mancevski, Joseph J Kopanski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin, Vincent LaBella, Kathleen Dunn
Abstract: This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907033

24. Challenges and Opportunities of Organic Electronics
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

25. Challenges for Physical Characterization of Silver Nanoparticles Under Pristine and Environmentally Relevant Conditions
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/17/2011
Authors: Robert I. MacCuspie, Kim Rogers, Manomita Patra, Zhiyong Suo, Andrew John Allen, Matthew N. Martin, Vincent A Hackley
Abstract: The conditions used to disperse silver nanoparticles (AgNPs) strongly impact their resulting size measurements and agglomeration state, based on the underlying metrology and physical chemistry, respectively. A series of AgNP materials with reported ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907651

26. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

27. Characterization of Probe Dynamic Behaviors in Critical Dimension Atomic Force Microscopy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 10/15/2008
Authors: Shaw C Feng, Che B. Joung, Theodore Vincent Vorburger
Abstract: Critical Dimension Atomic Force Microscopy (CD-AFM) is a primary means to measure the geometric shapes of walls and trenches on the nanometer scale in laboratories supporting the electronic industry. As the widths of commercially available CD-AFM pro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=824690

28. Characterization of Soluble Anthradithiophene Derivatives
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/18/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905386

29. Characterization of TiO2 Memristors on Flexible Substrates
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/19/2010
Authors: Joseph Leo Tedesco, Nadine Emily Gergel-Hackett, Laurie A. Stephey, Christina Ann Hacker, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906390

30. Characterization of a Soluble Anthradithiophene Derivative
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704



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