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Topic Area: Characterization, Nanometrology, and Nanoscale Measurements
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1. Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 6/7/2013
Authors: Ravikiran Attota, Benjamin D. Bunday, Victor Vertanian
Abstract: We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22  ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913353

2. Surface Chemical Transformations of UV irradiated Silica-Epoxy Nanocomposites
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 5/15/2013
Authors: Justin M Gorham, Tinh Nguyen, Deborah L Stanley, Coralie Bernard, Richard D Holbrook
Abstract: Silica nanoparticles (SiNPs) incorporated into a polymeric matrix, or silica nanocomposites (SiNCs), are used in a wide variety of commercially available products in numerous natural and artificial environments. Environmental factors, such as light, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913534

3. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

4. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

5. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2013
Authors: Bryan M Barnes, Francois Romain Francis Goasmat, Martin Yeungjoon Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

6. Frontiers of Characterization and Metrology for Nanoelectronics: 2013
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/26/2013
Authors: Erik M Secula, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913713

7. Quantitative Characterization and Applications of A 193 nm Scatterfield Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Martin Yeungjoon Sohn, Bryan M Barnes, Richard M Silver
Abstract: With decreasing feature sizes in semiconductor manufacturing, there is an acute demand for measurements of both critical dimensions (CD) and defects on the nanometer scale that must also be non-destructive measurement and provide high throughput1. Sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912991

8. SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/25/2013
Authors: Richard M Silver, Bryan M Barnes, Francois Romain Francis Goasmat, Hui Zhou, Martin Yeungjoon Sohn
Abstract: The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has b ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913246

9. Experimental Evidence for s-Wave Pairing Symmetry in Superconducting Cu_{x}Bi_{2}Se_{3} Single Crystals Using a Scanning Tunneling Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/12/2013
Authors: Niv Levy, Tong Zhang, Jeonghoon Ha, Fred Sharifi, Alec Talin, Young Kuk, Joseph A Stroscio
Abstract: Topological superconductors (TS) are a newly predicted phase of matter which is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of its topological character, TS supports massless itinerant quas ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912712

10. Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/12/2013
Authors: Tong Zhang, Niv Levy, Jeonghoon Ha, Young Kuk, Joseph A Stroscio
Abstract: Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains c ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913044