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Topic Area: Semiconductor Materials
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Displaying records 61 to 70.
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61. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

62. Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)
Topic: Semiconductor Materials
Published: 11/2/2010
Authors: Jessica M. Torres, Nathan Bakken, Christopher M Stafford, Jian Li, Vogt D Bryan
Abstract: The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905662

63. Tin Oxide Nanowire Sensor with Integrated Temperature and Gate Control for Multi-Gas Recognition
Topic: Semiconductor Materials
Published: 3/7/2012
Authors: Eric N. (Eric) Dattoli, Albert Davydov, Kurt D Benkstein
Abstract: The selectivity of a chemiresistive gas sensor comprising an aligned array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by utili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909477

64. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Semiconductor Materials
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911884

65. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
Topic: Semiconductor Materials
Published: 3/12/2013
Authors: Ari David Feldman, John H Lehman, Richard K. Ahrenkiel
Abstract: The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-ty ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911502

66. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Topic: Semiconductor Materials
Published: 3/6/2012
Authors: Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

67. Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors
Topic: Semiconductor Materials
Published: 8/27/2012
Authors: Nayool Shin, Dean M DeLongchamp, Jihoon Kang, Regis J Kline, Lee J Richter, Vivek M Prabhu, Balaji Purushothamanc, John E Anthony, Do Y Yoon
Abstract: The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film trans ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906842

68. Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides
Topic: Semiconductor Materials
Published: 1/14/2009
Author: John S Suehle
Abstract: This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32796

69. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Topic: Semiconductor Materials
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913440

70. Zone-Refinement Effect in Small Molecule‹Polymer Blend Semiconductors for Organic Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/14/2010
Authors: Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek M Prabhu, Regis J Kline, John E Anthony, Do Y Yoon
Abstract: The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906520



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