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Topic Area: Semiconductor Materials
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Displaying records 61 to 70 of 79 records.
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61. Silicon Nanowire NVM with High-k Gate Dielectric Stack
Topic: Semiconductor Materials
Published: 9/1/2009
Authors: Xiaoxiao Zhu, D. Gu, Qiliang Li, D. Ioannoua, H. Baumgart, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904090

62. Single-Target Magnetron Sputter-Deposition of High-T^dc^ Superconducting Bi-Sr-Ca-Cu-O Thin Films
Topic: Semiconductor Materials
Published: 11/15/1988
Authors: Neelkanth G Dhere, J. P. Goral, A. R. Mason, R. G. Dhere, Ronald H. Ono
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=7493

63. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

64. Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling
Topic: Semiconductor Materials
Published: 6/24/2009
Authors: Qiliang Li, Xiaoxiao Zhu, D. Ioannou, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904092

65. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852526

66. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467

67. Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials
Topic: Semiconductor Materials
Published: 10/26/2012
Authors: Adam J. Berro, Andrew J. Berglund, Peter T. (Peter T) Carmichael, Jong Seung Kim, James Alexander Liddle
Abstract: Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is one of the most important factors ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909231

68. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductor Materials
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

69. The molecular basis of mesophase ordering in a thiophene-based copolymer
Topic: Semiconductor Materials
Published: 2/18/2009
Authors: Dean M DeLongchamp, Regis J Kline, Youngsuk Jung, Eric K Lin, Daniel A Fischer, David J Gundlach, Andrew Moad, Lee J Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
Abstract: The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852781

70. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241



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