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Topic Area: Semiconductor Materials
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Displaying records 61 to 70 of 75 records.
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61. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...

62. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...

63. Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials
Topic: Semiconductor Materials
Published: 10/26/2012
Authors: Adam J. Berro, Andrew J. Berglund, Peter T. (Peter T) Carmichael, Jong Seung Kim, James Alexander Liddle
Abstract: Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is one of the most important factors ...

64. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductor Materials
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...

65. The molecular basis of mesophase ordering in a thiophene-based copolymer
Topic: Semiconductor Materials
Published: 2/18/2009
Authors: Dean M DeLongchamp, Regis J Kline, Youngsuk Jung, Eric K Lin, Daniel A Fischer, David J Gundlach, Andrew Moad, Lee J Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
Abstract: The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural ...

66. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...

67. Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)
Topic: Semiconductor Materials
Published: 11/2/2010
Authors: Jessica M. Torres, Nathan Bakken, Christopher M Stafford, Jian Li, Vogt D Bryan
Abstract: The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular ...

68. Tin Oxide Nanowire Sensor with Integrated Temperature and Gate Control for Multi-Gas Recognition
Topic: Semiconductor Materials
Published: 3/7/2012
Authors: Eric N. (Eric) Dattoli, Albert Davydov, Kurt D Benkstein
Abstract: The selectivity of a chemiresistive gas sensor comprising an aligned array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by utili ...

69. Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Topic: Semiconductor Materials
Published: 3/6/2013
Author: Matthew David Brubaker
Abstract: In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce ...

70. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
Topic: Semiconductor Materials
Published: 3/12/2013
Authors: Ari D Feldman, John H Lehman, Richard K. Ahrenkiel
Abstract: The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-ty ...

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