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Topic Area: Semiconductor Materials
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Displaying records 31 to 40 of 71 records.
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31. Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry
Topic: Semiconductor Materials
Published: 11/2/2009
Authors: Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D Vaudin, Mikhail Efremov, Martin L Green, David A LaVan, Leslie Allen
Abstract: We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions hav ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902298

32. Measurement of residual stress field anisotropy at indentations in silicon
Topic: Semiconductor Materials
Published: 6/23/2010
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation spec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905445

33. Measuring the extent of phase separation in P3HT/PCBM photovoltaic blends with 1H spin diffusion NMR spectroscopy
Topic: Semiconductor Materials
Published: 4/5/2010
Authors: Ryan C Nieuwendaal, Chad R Snyder, Regis J Kline, Eric K Lin, David Lloyd VanderHart, Dean M DeLongchamp
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903680

34. Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications
Topic: Semiconductor Materials
Published: 2/7/2007
Authors: Hyun W. Ro, K Char, Eun-Chae Jeon, H C Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L Soles, Do Y. Yoon
Abstract: An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852621

35. Metrology, Nanocharacterization and Instrumentation for Emerging Nanotechnology and Nanoelectronics: Electrical and Optical Characterization
Topic: Semiconductor Materials
Published: 12/9/2007
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32866

36. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

37. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853

38. Molecular Beam Epitaxial Growth and Characterization of Cd-Based II-VI Wide-Bandgap Compounds on Si Substrates
Topic: Semiconductor Materials
Published: 1/3/2005
Authors: G Brill, Y Chen, Paul M. Amirtharaj, W Sarney, N. K. Dhar, Deane Chandler-Horowitz
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906311

39. NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000
Topic: Semiconductor Materials
Published: Date unknown
Authors: Donald A Windover, David L. Gil, Albert Henins, James P Cline
Abstract: NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902585

40. Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Topic: Semiconductor Materials
Published: 3/28/2008
Authors: Hyun W. Ro, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852733



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