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Topic Area: Semiconductor Materials
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Displaying records 31 to 40 of 74 records.
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31. In situ observation of the indentation-induced phase transformation of silicon thin films
Topic: Semiconductor Materials
Published: 3/5/2012
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Aaron M Forster, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman microspectroscopy of the deformed contact region of silicon on sapphire samples during contact loading and unloading. During loading, the formation of Si-II and another ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910047

32. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Semiconductor Materials
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

33. Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry
Topic: Semiconductor Materials
Published: 11/2/2009
Authors: Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D Vaudin, Mikhail Efremov, Martin L Green, David A LaVan, Leslie Allen
Abstract: We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions hav ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902298

34. Measurement of residual stress field anisotropy at indentations in silicon
Topic: Semiconductor Materials
Published: 6/23/2010
Authors: Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation spec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905445

35. Measuring the extent of phase separation in P3HT/PCBM photovoltaic blends with 1H spin diffusion NMR spectroscopy
Topic: Semiconductor Materials
Published: 4/5/2010
Authors: Ryan C Nieuwendaal, Chad R Snyder, Regis J Kline, Eric K Lin, David Lloyd VanderHart, Dean M DeLongchamp
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903680

36. Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications
Topic: Semiconductor Materials
Published: 2/7/2007
Authors: Hyun W. Ro, K Char, Eun-Chae Jeon, H C Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L Soles, Do Y. Yoon
Abstract: An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852621

37. Metrology, Nanocharacterization and Instrumentation for Emerging Nanotechnology and Nanoelectronics: Electrical and Optical Characterization
Topic: Semiconductor Materials
Published: 12/9/2007
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32866

38. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

39. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853

40. Molecular Beam Epitaxial Growth and Characterization of Cd-Based II-VI Wide-Bandgap Compounds on Si Substrates
Topic: Semiconductor Materials
Published: 1/3/2005
Authors: G Brill, Y Chen, Paul M. Amirtharaj, W Sarney, N. K. Dhar, Deane Chandler-Horowitz
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906311



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