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You searched on: Topic Area: Semiconductor Materials Sorted by: title

Displaying records 31 to 40 of 51 records.
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31. Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics
Topic: Semiconductor Materials
Published: 4/25/2016
Authors: Junwen Li, Paul M Haney
Abstract: Organic-inorganic halide CH^d3^NH^d3^PbI^d3^ solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919936

32. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

33. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

34. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

35. Particle-based simulation of nanoscale systems and materials
Topic: Semiconductor Materials
Published: 1/1/2015
Authors: Alexander Y Smolyanitsky, Vinod K Tewary
Abstract: This book chapter is focused on the introduction of molecular dynamics (MD) and molecular statics (MS), as well as some of their uses for studying the thermomechanical and (indirectly) electronic properties at the nanoscale. We first introduce th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914989

36. Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 12/18/2015
Authors: Matthew David Brubaker, Shannon M.M. Duff, Todd E Harvey, Paul T Blanchard, Alexana Roshko, Aric Warner Sanders, Norman A Sanford, Kristine A Bertness
Abstract: We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers. In particular, we find that N- polarity is beneficial for the growth of large ordered n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917880

37. Pulsed KrF excimer laser dopant activation in nanocrystal silicon in a silicon dioxide matrix
Topic: Semiconductor Materials
Published: 2/22/2016
Authors: Tian Zhang, Brian J Simonds, Keita Nomoto, Binesh Puthen Veettil, Ziyun Lin, Ivan Perez Wurfl, Gavin Conibeer
Abstract: We demonstrate that a pulsed KrF excimer laser (λ=248 nm, τ=22 ns) can be used as a post-furnace annealing method to greatly increase the electrically active doping concentration in nanocrystal silicon (ncSi) embedded in SiO2. The applicati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919933

38. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

39. Semiconductor Nanocrystal Probes for Human Metaphase Chromosomes
Topic: Semiconductor Materials
Published: 2/1/2004
Authors: Yan Xiao, Peter E. Dr. Barker
Abstract: Novel inorganic fluorophores called semiconductor nanocrystals have recently been incorporated into protein, antibody and microbead oligonucleotide detection methods where previously, organic dyes were universally employed. To improve quantitation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830407

40. Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity
Topic: Semiconductor Materials
Published: 3/2/2016
Authors: Matthew David Brubaker, Alexana Roshko, Paul T Blanchard, Todd E Harvey, Norman A Sanford, Kristine A Bertness
Abstract: The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich gr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919689



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