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You searched on: Topic Area: Semiconductor Materials Sorted by: title

Displaying records 31 to 40 of 48 records.
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31. Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics
Topic: Semiconductor Materials
Published: 4/25/2016
Authors: Junwen Li, Paul M Haney
Abstract: Organic-inorganic halide CH$_3$NH$_3$PbI$_3$ solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919936

32. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

33. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

34. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

35. Particle-based simulation of nanoscale systems and materials
Topic: Semiconductor Materials
Published: 1/1/2015
Authors: Alexander Y Smolyanitsky, Vinod K Tewary
Abstract: This book chapter is focused on the introduction of molecular dynamics (MD) and molecular statics (MS), as well as some of their uses for studying the thermomechanical and (indirectly) electronic properties at the nanoscale. We first introduce th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914989

36. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

37. Semiconductor Nanocrystal Probes for Human Metaphase Chromosomes
Topic: Semiconductor Materials
Published: 2/1/2004
Authors: Yan Xiao, Peter E. Dr. Barker
Abstract: Novel inorganic fluorophores called semiconductor nanocrystals have recently been incorporated into protein, antibody and microbead oligonucleotide detection methods where previously, organic dyes were universally employed. To improve quantitation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830407

38. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

39. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852526

40. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul T Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B. Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467



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